Semiconductor structure tolerant to ionizing radiation.

摘要

A radiation tolerant semiconductor structure comprising a plurality of active field effect transistor portions (12, 18) electrically insulated by an insulating structure (25). The insulating structure comprises a plurality of insulating layers (26, 27). The number of these layers and their selective dielectric constants and thicknesses are chosen to reduce the effect of ionizing radiation on the electrical insulation of the active field effect transistor portions.