| 摘要 |
PURPOSE:To obtain an MIS transistor having the small junction capacitance of the source and drain regions and small short channel effect by a method wherein an insulator is buried under a gate insulation film via a semiconductor layer, and the source and drain regions are provided shallowly on this insulator and deeply at the part without the insulator on both sides of said layer. CONSTITUTION:A groove sufficiently deep from the surface is bored at the center of a P type Si substrate 11, and, while filling there, an SiO2 film 12 is adhered over the entire surface. Next, the film 12 is left only in the groove, a polycrystalline Si is grown over the entire surface by removing the other part, and the Si is changed into a single crystal 13 by laser annealing. Thereafter, a P type region 16 of a small diameter is diffusion-formed by being positioned on the film 12 in the single crystal region 13. The gate insulation film 14 is adhered over the entire surface including said region and made to correspond to the region 16, and the gate electrode 15 composed of polycrystalline Si is provided. Then, phosphorus ions are implanted through the film 14, thus forming the source and drain regions 17 shallowly at the upper surface end part of the film 12, and deeply at the other part on both sides of the region 16, respectively. |
