| 摘要 |
PURPOSE:To obtain an I<2>L without the generation of the failure of collector-base withstand voltage by a method wherein a semiconductor layer containing an imurity of conductivity type different from that of a base region is placed on said region, and a collector region is formed by making the thickness of an insulation layer covering said layer larger in the side surface than in the upper surface, when the collector region is formed in the base region. CONSTITUTION:An N<+> buried region 2 is diffusion-formed in the surface layer part of a P type Si substrate 1, an N type epitaxial layer 3 is epitaxially grown over the entire surface including said region, and an N<+> type emitter region 4 reaching the region 2 is formed thereat. Next, thick field oxide films 5 are formed on both sides of the surface of the region 4 and on the other end of the layer 3, a P type injector region 6 and a P type common base region 7 are diffusion-formed in the layer 3 other than the region 4, and the clearance therebetween is covered with an oxide film 14. Thereafter, an As doped polycrystalline Si layer 8 is provided on the region 7 and surrounded by an insulation film. The impurity in the layer 8 is diffused by heat treatment, thus forming an N<+> type collector region 10 in the region 7; while, the layer 8 is not only surrounded by an oxide film 11 but provided with a nitride film, etc. by superposition further on the side surface. |
