| 摘要 |
<p>Method for the production of devices having a memory action with amorphous semiconductors, comprising in sequence a substrate on which is deposited a lower electrode, an active area produced by means of an amorphous semiconductor compound and an upper electrode, comprising producing the active area in the form of a central layer constituting an active layer formed from a first amorphous semiconductor compound and at least one buffer layer placed on one of the upper and lower faces of the active layer, said buffer layers being formed from a second amorphous semiconductor compound in the form of a quaternary compound selected from the group containing germanium, tellurium, arsenic and sulphur and producing at least one of the electrodes in such a way that it constitutes the actual electrode and with a thin layer turned towards the active area constituting a barrier, wherein the actual electrodes are made from a metal chosen from the group including tungsten and tantalum which can diffuse into the buffer layers and which with the second amorphous semiconductor compound constituting the said buffer layers can form a binary compound with a hexagonal structure in such a way that the barrier necessary for stabilizing the semiconductor is formed.</p> |
