| 摘要 |
PURPOSE:To fabricate the resist patterns of extra minute size with good reproducibility by etching a fundamental first thin filn in the manner that a second thin film placed on said first film overhangs and by controlling quantity of this etching. CONSTITUTION:An insultaing film 12 is formed on a semiconductor substrate 11 and a thin film having a function to shade the light of exposure for a resist material, for example, a metallic thin film 13 is formed on said film 12. Next, this thin film 13 is coated with a resist material to form a resist mask 14 comprising a desired pattern. Then the film 13 is removed by etching with using the mask 14 to form a pattern of the same figure as the mask 14. After the mask is removed, the film 12 is etched using the thin film 13 as a mask. This etching is done till the thin film 13 overhangs and the side etching under the thin film 13 is made to have a minute width. Next, the whole surface of the substrate 11 is coated with a positive resist material 15. After overall exposure of the resist material 15, the material 15, the thin film 13 and the film 12 are removed to form the desired resist pattern 16. |
