| 摘要 |
PURPOSE:To enable fabrication of a single crystal semiconductor thin film in a predetermined position of an insulative substrate by providing a layer having predetermined unevenness on or under a polycrystalline or amorphous semiconductor layer to set temperature gradient at heating and cooling. CONSTITUTION:Polycrystalline Si2 is deposited on an insulative substrate 1 and an SiO2 film 3 having predetermined recesses 5 and protrusions 6 is formed on the Si2. As melting point of SiO2 is higher than that of Si, it is possible to fuse only Si 2 by heating with a heater 4 being in contact with the film 3. The temperature of the part of the film 3 touching the heater 4 becomes slightly higher than that of the part not touching the heater 4. After continuing heating till the Si2 is fused, the temperature of the heater 4 is lowered so that the Si solidifies starting with the part whose temperature is lowest and solidification is completed in the part whose temperature is highest, where the crystal grain boundary is then formed. After solidification, an Si regrown film 7 comprises the crystal grain boundary 8 under the protrusions of the film 3. Thus the figure of the unevenness of pattern can control the orientation of crystal growth. |
