| 摘要 |
<p>PURPOSE:To contrive to enhance transference of electrons or holes on the surface of single crystal silicon on polycrystalline silicon or an insulator by a method wherein hydrogen or fluorine is made to be contained to the grain boundary or the crystal defect part of the single crystal silicon on the polycrystalline silicon or the insulator according to the hydrogen plasma process, etc., to form Si-H bonding or Si-F bonding. CONSTITUTION:When polycrystalline silicon is exposed into hydrogen plasma, H is bonded to Si-unsaturated bond of a grain boundary to form Si-H bond. The condition thereof is not obtained according to hydrogen annealing of the extent of 400 deg.C, but can be presented by driving active hydrogen in the polycrystalline silicon according to the plasma process, ion implantation process, photo process, etc. Thereupon, in the condition formed with Si-H bonding by bonding H to Si- unsaturated bonding of a crystal defect part in a single crystal 22 on an insulating substrate 21, the single crystal silicon on an insulating film has many crystal defects, and indicates a characteristic similar to the polycrystalline silicon.</p> |
