| 摘要 |
PURPOSE:To obtain a semiconductor device causing no deterioration in the characteristics such as the photosensitivity by forming a carbon film and an Si film on the surface of an Al substrate. CONSTITUTION:A carbon film 12 of 1-5mum thickness is formd on the surface of an Al substrate 11, and an amorphous Si film 13 of about 10mum thickness is formed on the film 12. The carbon film has power to hinder the diffusion of Al atoms from the Al substrate when light is irradiated, and the carbon film hinders the penetration of Al atoms into the Si film, so the characteristics of the Si film such as the photosensitivity are not deteriorated. |
