| 摘要 |
PURPOSE:To flatten the surface of a semiconductor device, to facilitate formation of a multilayer wiring of two layers or more, and to enable to attain high yield by a method wherein after an interlayer insulating film to insulate between the wiring and the wiring of upper layer thereof is deposited on the first wiring on the semiconductor device, mechanochemical polishing is performed. CONSTITUTION:After a field oxide film 12 and a channel stopper region 13 are formed on a P type silicon substrate 11, a gate oxide film 14 is formed. A silicon oxide film 17 is deposited, a first aluminum layer 18 is adhered at the extent of 0.8mum thickness, and is patterned. When a silicon oxide film 19 of the extent of 1.5mum film thickness is deposited similarly at about two times of thickness of the aluminum film according to the vapor phase growth method in succession, unevenness of the surface is reduced a little. Then when polishing is performed to 0.5-0.7mum thickness with pressure of 110g/cm<2> according to an abrasive liquid suspending silica fine powder of 100Angstrom diameter or less in a weak alkali liquid, for example, the surface of the interlayer insulating film is nearly flattened. After a contact hole to be connected to the first aluminum wiring layer is opened, an aluminum film 20 is adhered moreover according to the vacuum evaporation method, and is patterned similarly. |
