| 摘要 |
PURPOSE:To prevent a blooming and a smear phenomenon by adopting Schottky structure for a photodetector. CONSTITUTION:Second conduction type impurity diffusion regions 2, 3 are formed on a first conduction type silicon semiconductor substrate 1. A Schottky metal layer 4 is formed extending over the semiconductor substrate 1 and the diffusion region 2. An insulating layer 6 with a gate region 5 is formed on these regions 1-4. The substrate 1, the diffusion region 2 and the Schottky metal layer 4 function as Schottky type photodetecting sections, and execute a detection through which a blooming and a smear phenomenon are not generated. The diffusion regions 2, 3 and the gate 5 constitute an MOS transistor, and transfer detecting outputs. |
