| 摘要 |
PURPOSE:To eliminate the surface stepping of an interlayer insulating film by a method wherein the stepping on the surface of a substrate is filled up and flattened before formation of the interlayer insulating film. CONSTITUTION:An interlayer insulating film 13a is formed on the semiconductor substrate 11, whereon the first layer of metal wiring 12 is formed, is provided by performing a plasma CVD or a vapor-deposition or the like, and a resist 14 is formed in the recessed part of the interlayer insulating film 13a. The interlayer insulating film 13a is removed using the resist 14 as a mask, and the resist 14 is then removed, thereby enabling to fill up the recessed part of the substrate 11 formed by the metal wiring 12 and the surface is flattened. Subsequently, an interlayer insulating film 13b is formed, and the interlayer insulating film having no stepping is obtained. |
