发明名称 INTEGRATED SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To enable rear section specular coating and cleavage, and to improve performance by extracting beams from a side surface in the rectangular direction to a resonant optical axis of an active layer or a wave guide layer in a semiconductor laser element and supplying a photodetector with said beams. CONSTITUTION:With a semiconductor laser element 1, a resonator is formed by resonator specular surfaces 4a, 4b, it is oscillated by currents flowing between a power supply terminal 7 for drive and a common electrode 9, and oscillation beams are wave-guided by an active layer 6 and an optical guide layer 3 optically coupling with the active layer 6. One part of beams is converted into a radiation mode by a projecting section 10 formed to the optical guide layer 3 at that time, and emitted toward a photodetector 2.
申请公布号 JPS59135790(A) 申请公布日期 1984.08.04
申请号 JP19830011166 申请日期 1983.01.24
申请人 MITSUBISHI DENKI KK 发明人 MORIKI KAZUNORI;OOSAWA JIYUN;IKEDA KENJI;SUZAKI WATARU
分类号 H01S5/00;H01L31/173;H01S5/026 主分类号 H01S5/00
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