发明名称 PATTERN FORMATION BY LIGHT UTILIZING LOW TEMPERATURE ADSORPTION
摘要 PURPOSE:To obtain a thin film with a sufficient film thickness by even a light irradiation time is short by a method wherein a pattern of a product is formed on a substrate by an irradiation of the light with a wavelength by which a reaction is triggered on an adsorbed substrate. CONSTITUTION:A valve 1 is opened and the inside air of a vacuum cell 2 is completely evacuated by a vacuum pump system P. Then a valve 3 is opened and vapor is introduced into the cell 2 from a sink 4 in which a material for a vapor source is contained. Then liquid nitrogen is introduced from a liquid nitrogen inlet 5 and an Si substrate 6 is cooled. A solid W(CO)6 film is produced on the surface of the substrate 6 as time passes. The substrate 6 is irradiated by a laser beam L to trigger a dissociation reaction and a W pattern is formed as a product. With this constitution, very efficient reaction efficiency can be expected and the efficiency of the light is high because the light beam is irradiated directly to the solid reaction material.
申请公布号 JPS59135726(A) 申请公布日期 1984.08.04
申请号 JP19830008733 申请日期 1983.01.24
申请人 HITACHI SEISAKUSHO KK 发明人 KIMURA SHIGEJI
分类号 C23C16/48;H01L21/205;H01L21/285;H01L21/31 主分类号 C23C16/48
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