| 摘要 |
PURPOSE:To facilitate the control of the size and the resistance value when a high resistance part is formed in a polycrystalline Si by combining a polycrystal in which an impurity is not diffused and a polycrystal in which an impurity is diffused when forming a pattern made of polycrystalline Si. CONSTITUTION:A polycrystalline Si film 1 is accumulated through an SiO2 film 2 on a semiconductor substrate 3, and an SiO2 film 4 is covered on a resistance forming part. Then, an impurity is implanted to the entire surface by an ion implanting unit to coexist a part in which an impurity is diffused and a part in which no impurity is diffused in the film 1. Thus, the implanted impurity is not yet activated, and since the etching velocities of these parts are equal, the primary SiO2 film 2 is not overetched even if etched in this state, but the parts 1, 1' of desired size can be obtained. Then, the film 4 is removed, an annealing is performed, an impurity to be implanted is activated, and an Si film of low resistance is obtained on the part 1', and a desired high resistance Si film is obtained on the part 1. |
