| 摘要 |
PURPOSE:To improve an injection efficiency in a high withstand I<2>L by forming a low impurity density N<-> type layer directly under the P type injector region of the I<2>L, and forming a high density N type layer between N<+> type buried layers directly under the P type base region of a reverse N-P-N type transistor. CONSTITUTION:Two N<+> type buried layers 2 are formed by diffusing on the surface layer of a P<-> type Si substrate 1, and an SiO2 film 8 having the prescribed hole is covered on the entire surface including it. Then, N type regions 7a, 7b are diffused in the collector pickup region of an N-P-N type transistor provided in a linear portion I and an N-P-N type transistor forming region of an I<2>L portion II, an N<-> type layer 3 is epitaxially grown on the entire surface including it, a P type base region 11, an N<+> type emitter region 13 disposed in the region 11, and further an N<+> type collector pickup region 14 in the layer 3 are respectively diffused in the linear portion I . A P type injector region 4 and P type base regions 5 of a reverse N-P-N type transistor interposed at both sides of the region 4 are respectively diffused in the I<2>L portion II. |
