| 摘要 |
PURPOSE:To avoid a diffusion between channels by first forming source and drain regions when manufacturing an MOS type semiconductor device, then covering an interlayer insulating film with a PSG film, heat treating it to alleviate a stepwise structure, then forming an SiN film, isotropically plasma etching selectively, anisotropically plasma etching the exposed primary PSG film and forming a contacting hole. CONSTITUTION:A thin gate oxidized film 203 is covered on the surface of a semiconductor substrate, a gate electrode 202 made of a polycrystalline Si is formed at the center on the surface, and with the electrode as a mask ions are implanted through a film 203, thereby forming a source region 204 and a drain region 205. Then, a PSG film 201 is grown on the entire surface, heat treated to alleviate the stepwise difference, and an SiN film 206 is covered thereon. Subsequently, the film 206 is isotropically plasma etched to incline the side wall of the obtained contacting hole. Then, the exposed film 201 is anisotropically etched to obtain a complete hole. |
