| 摘要 |
<p>PURPOSE:To obtain a semiconductor device of an excellent heat sink structure by mounting a semiconductor pellet on one surface of an electrically insulating substrate which mainly contains SiC, and connecting it to a wiring substrate mounted on the other surface through the hole of the substrate. CONSTITUTION:An insulating substrate 12 which has mainly SiC and good thermal conductivity is bonded to a wiring substrate 11, and wirings 13, 15 are matched at the corresponding ones. A pipe 16 is provided in position on the surface of the substrate 12, and He 17 is flowed therein. A pellet 18 is disposed on the substrate 12, its electrode pads are matched to the electrode pads of the wirings 15 of the substrate 12, and fusion-bonded through a bump 19. A cover 20 is covered on the substrate 12, and a cavity 21 is airtightly sealed. According to this structure, the head led to the substrate 12 is transmitted through the entire sectional area of the substrate to a cooling pipe. Accordingly, its heat sink is extremely improved. Further, since the thermal expansion coefficient of the substrate of SiC is similar to that of the Si substrate, thermal distortion does not occur.</p> |
