| 摘要 |
A thin-film diode is formed by a semiconductor layer (14) sandwiched between the intersections of and upper (18) and lower (12) electrodes, each of narrow elongated form, portions of an insulating film (19) being disposed between the upper electrode (18) and the edges of the semiconductor layer (14) and the lower electrode (12). The diode is produced by depositing a PIN a-Si layer structure on a conductive layer and patterning to form an elongate strip. An insulating layer is deposited and processed to expose the upper face of the semiconductor strip. A second conductive layer is deposited and patterned to form the upper electrode extending transversely to the strip. The excess semiconductor and insulator is then etched away using the upper electrode as a mask. Variations of the process are described. A pair of diodes connected in inverse parallel may be used as a switching element for a liquid crystal display and occupy a small substrate area due to the self aligned contact. <IMAGE> |
