Method of controlled, uniform doping of floating zone silicon.

摘要

A two-step process for fabricating impurity doped float-zoned single crystal silicon boules which exhibit substantially controlled and uniform concentrations of the impurity is disclosed. This process, when applied to polycrystalling silicon rods (40) in a controlled environment of oxygen results in the production of high purity float-zoned silicon crystals (42) with substantially uniform oxygen concentrations of up to 32 ppma which are not currently attainable utilizing the conventional Czochralski silicon boule fabrication methods of the semiconductor industry.