发明名称 LEAD-INDIUM-SILVER ALLOY FOR USE IN SEMICONDUCTOR DEVICES
摘要 <p>A semiconductor device, for example a power rectifier, formed in a semiconductor body has a contact area coated with a metal layer of, for example, gold. A metallic member is soldered to the layer with an alloy comprising at least 80% lead, the balance being indium and silver in a ratio of at least 4:1 and at most 10:1. One such solder which has good wetting characteristics for improved bond strength contains approximately 92% lead, 7% indium, and 1% silver.</p>
申请公布号 GB2102833(B) 申请公布日期 1984.08.01
申请号 GB19810023478 申请日期 1981.07.31
申请人 * PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED 发明人 NEIL ANDREW * DAVIES;EDWARD THOMAS ELFED * HUGHES
分类号 H05K3/34;B23K35/26;C22C11/00;H01L21/52;H01L21/58;H01L23/492;(IPC1-7):22C11/00;23K1/12;23K1/20 主分类号 H05K3/34
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