发明名称 Method of forming a capacitor on a substrate.
摘要 <p>For forming a capacitor on a substrate an amorphous thin film layer (17) of a ferroelectric forming titanate or zirconate is deposited on a bottom electrode (13). A leakage current preventing dielectric layer (18) is deposited on the amorphous thin film layer (17) and laser annealed to a crystalline ferroelectric. The leakage current preventing dielectric layer (18) may also serve as an antireflective coating for the titanate or zirconate layer so that better coupling of the laser energy to the titanate or zirconate layer is obtained. The capacitor is completed by depositing a top electrode (15) on the crystalline ferroelectric.</p>
申请公布号 EP0114228(A2) 申请公布日期 1984.08.01
申请号 EP19830111406 申请日期 1983.11.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HOWARD, JAMES KENT
分类号 H01G4/33;H01G4/10;H01G4/20;H01L21/8246;H01L27/105;H01L27/115;H01L29/92 主分类号 H01G4/33
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