发明名称 High field surface ionization process and apparatus for purifying metal and semiconductor materials
摘要 Impure silicon, in relatively thin sheet form is purified by heating it in the presence of a strong electric field to ionize and remove impurity elements. Ion bombardment may be used to dislodge impurities accumulating on the surface of the sheet.
申请公布号 US4462806(A) 申请公布日期 1984.07.31
申请号 US19820355174 申请日期 1982.03.05
申请人 MAHONEY, JOHN F.;PEREL, JULIUS 发明人 MAHONEY, JOHN F.;PEREL, JULIUS
分类号 C01B33/037;C22B9/14;C22B9/22;(IPC1-7):C01B33/02 主分类号 C01B33/037
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