发明名称 |
High field surface ionization process and apparatus for purifying metal and semiconductor materials |
摘要 |
Impure silicon, in relatively thin sheet form is purified by heating it in the presence of a strong electric field to ionize and remove impurity elements. Ion bombardment may be used to dislodge impurities accumulating on the surface of the sheet.
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申请公布号 |
US4462806(A) |
申请公布日期 |
1984.07.31 |
申请号 |
US19820355174 |
申请日期 |
1982.03.05 |
申请人 |
MAHONEY, JOHN F.;PEREL, JULIUS |
发明人 |
MAHONEY, JOHN F.;PEREL, JULIUS |
分类号 |
C01B33/037;C22B9/14;C22B9/22;(IPC1-7):C01B33/02 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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