发明名称 |
Selective etching of aluminum |
摘要 |
A process for selectively etching an aluminum-containing coating in preference to a masking material on a surface of the aluminum-containing coating by positioning a patterned masking material on the aluminum-containing coating in a radio frequency plasma etching chamber and introducing an etchant gas and a source of oxygen and silicon to the interior of the chamber under conditions where silicon dioxide is deposited selectively on masking material layer while the unmasked aluminum-containing coating is etched.
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申请公布号 |
US4462882(A) |
申请公布日期 |
1984.07.31 |
申请号 |
US19830454946 |
申请日期 |
1983.01.03 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
HORWITZ, CHRISTOPHER M. |
分类号 |
C23F4/00;H01L21/02;H01L21/3213;(IPC1-7):C03C15/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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