发明名称 SOLID STATE IMAGE SENSOR
摘要 <p>SOLID STATE IMAGE SENSOR The present invention is directed to a solid state image sensor comprising a charge transfer device such as a charge coupled device (CCD), wherein an improved arrangement of transfer electrodes is provided for the charge transfer device therein and the number of effective sensing elements for performing practically the image sensing operation can be altered in accordance with the manner of supplying a driving signal to the transfer electrodes, so that either one of different television signals, for example, color television signals according to the NTSC system and the PAL or SECAM system, can be selectively produced thereby.</p>
申请公布号 CA1171948(A) 申请公布日期 1984.07.31
申请号 CA19820401203 申请日期 1982.04.19
申请人 SONY CORPORATION 发明人 NAGUMO, FUMIO;TAKESHITA, KANEYOSHI
分类号 H04N5/335;H04N5/341;H04N5/372;H04N7/01;(IPC1-7):H01L27/14;H04N3/14 主分类号 H04N5/335
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