发明名称 Method of forming a multilayer thin film
摘要 A method of forming a multilayer thin film is disclosed in which a second thin conductive film is deposited on a first thin conductive film uninterruptedly after the first thin film has been deposited on a substrate, the first and second films thus formed are processed so as to form a predetermined pattern, the surface of the second thin film is cleaned by ion etching and a third thin conductive film is deposited on the whole surface of the substrate, and then the second and third thin films are processed so as to have a pattern different from the above-mentioned predetermined pattern. In the case where two thin conductive films different in material and pattern from each other are piled on a substrate, the above method can form a perfect interconnection between the two films and can make very small the contact resistance between the two films. Accordingly, the method is fit to form, for example, a barber pole type magnetoresistive element.
申请公布号 US4462881(A) 申请公布日期 1984.07.31
申请号 US19810322697 申请日期 1981.11.18
申请人 HITACHI, LTD. 发明人 YAMAMOTO, HIROSHI;SHIMIZU, NOBORU;SUENAGA, MASAHIDE;TSUKADA, YUKIHISA;TAKEURA, TOORU
分类号 G11B5/31;G11B5/39;H01F41/34;(IPC1-7):C23C15/00 主分类号 G11B5/31
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