发明名称 |
Method of forming a multilayer thin film |
摘要 |
A method of forming a multilayer thin film is disclosed in which a second thin conductive film is deposited on a first thin conductive film uninterruptedly after the first thin film has been deposited on a substrate, the first and second films thus formed are processed so as to form a predetermined pattern, the surface of the second thin film is cleaned by ion etching and a third thin conductive film is deposited on the whole surface of the substrate, and then the second and third thin films are processed so as to have a pattern different from the above-mentioned predetermined pattern. In the case where two thin conductive films different in material and pattern from each other are piled on a substrate, the above method can form a perfect interconnection between the two films and can make very small the contact resistance between the two films. Accordingly, the method is fit to form, for example, a barber pole type magnetoresistive element.
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申请公布号 |
US4462881(A) |
申请公布日期 |
1984.07.31 |
申请号 |
US19810322697 |
申请日期 |
1981.11.18 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMAMOTO, HIROSHI;SHIMIZU, NOBORU;SUENAGA, MASAHIDE;TSUKADA, YUKIHISA;TAKEURA, TOORU |
分类号 |
G11B5/31;G11B5/39;H01F41/34;(IPC1-7):C23C15/00 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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