Method of forming energy beam activated conductive regions between circuit elements

摘要

A method of manufacturing semiconductor devices is disclosed. In the method, a redundancy circuit is formed by forming circuit elements making up an integrated circuit on a semiconductor substrate and a spare element connected to the circuit element through an electrically non-active region. Then, an impurity region is formed in the non-active region by introducing impurity and is electrically selectively activated with laser irradiation, whereby the circuit elements and the spare element are interconnected electrically.