发明名称 SEMICONDUCTOR INTEGRATED PHOTOMETRIC CIRCUIT
摘要 PURPOSE:To lower a source voltage by adding a level shift circuit consisting basically of an npn transistor (TR) and a pnp TR on multiple connection basis to the output circuit of a high-input-impedance operational amplifier. CONSTITUTION:A photoelectric converting element such as a photodiode and a phototransistor is used, and an electric signal obtained by the conversion of the photoelectric converting element Q1 is amplified by the high-input-impedance operational amplifier 100. On the other hand, feedback diodes Q2 and Q2' compress a photocurrent logarithmically and the logarithmically compressed voltage is measured. At this time, the level shifting circuit 200 consisting of the emitter- follower npn TR and the emitter-follower pnp TR on multiple connection basis is used as the output circuit of the operational amplifier 100.
申请公布号 JPS59133439(A) 申请公布日期 1984.07.31
申请号 JP19830009122 申请日期 1983.01.20
申请人 MITSUBISHI DENKI KK 发明人 OGATA TAKASHI
分类号 G01J1/44;H01L21/8234;H01L27/088 主分类号 G01J1/44
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