| 摘要 |
<p>PURPOSE:To form each element in close proximity, by insulating light emitting and receiving elements by a highly resistive zink selenide layer. CONSTITUTION:A light receiving element 22 comprises an N-GaAs substrate 21, an N-GaAs layer 4, a P-GaAs region 10, and electrodes 11 and 12. A light emitting element 23 comprises an N-AlGaAs clad layer 5, a P-GaAs active layer 6, a P-AlGaAs clad layer 7 and electrodes 8 and 9. The element 23 is formed by sequential growing on the element 22 through a highly resistive ZnSe layer 24. Light emitted by the layer 6 passes the layers 5 and 24 and reaches the element 22.</p> |
