| 摘要 |
PURPOSE:To improve productivity and to enhance a yield rate, by a first liquid phase epitaxial growing process, an etching process, a process, by which a second liquid phase epitaxial growing is performed in the etched region, and a third liquid phase epitaxial growing process. CONSTITUTION:On an N type GaAs substrate 9, the following layers are formed by epitaxial growth: an N type Al0.3Ga0.7As clad layer 1; an N type Al0.1Ga0.9As light guiding layer 2; an Al0.03Ga0.97As active layer 3; and a P type Al0.3Ga0.7As clad layer 4. Then, the semiconductor layers 1-4 are made to remain in stripe shapes by etching. Then, a P type Al0.3Ga0.7As layer 5 and an N type Al0.3Ga0.7 As layer 6 are provided by the epitaxial growth. An oxide layer 14 is formed on the layer 4. Then, a P type Al0.3Ga0.7As layer 7 and a P type GaAs layer 8 are sequentially formed by a liquid phase epitaxial growth. |
