| 摘要 |
PURPOSE:To dissolve the defect of an island, etc., according to an oxide film at a semiconductor device by a method wherein a second oxidation resisting film and a film having selective etchability to an oxidation resisting film are formed on the whole surface of a first oxidation resisting film and a protective film pattern formed on the positions corresponding to element formation programing parts on an insulating film on a semiconductor substrate. CONSTITUTION:A first Si3N4 film 23 and a CVD-SiO2 film 24 are formed on a thermal oxide film 22 formed on a p type Si substrate 21, and then resist patterns 25 are formed. Then the exposing CVD-SiO2 film 24 is etched using the resist patterns 25 thereof as a mask to form protective film patterns 26, then after the resist patterns 25 are removed, the first Si3N4 film 23 is etched using the CVD-SiO2 film patterns 26 as a mask to form first Si3N4 patterns 27. Then, ions are implanted using the CVD-SiO2 film patterns 26 as a mask, and moreover, a second Si3N4 film 28 and a polycrystalline silicon layer 29 are formed on the whole surface, and then, the polycrystalline silicon layer 29 is etched anisotropically to leave polycrystalline silicon layers 29' on the circumferential sides of the Si3N4 pattern 27 and the CVD-SiO2 pattern 26. |
