| 摘要 |
PURPOSE:To enable the use of a sensitivity layer of a low specific resistance and contrive to improve the transverse directional isolation by providing a plurality of signal sampling electrodes or regions and a photoelectric conversion layer joining thereto and having a selective impurity barrier region. CONSTITUTION:The signal sampling electrodes or regions 8 are selectively arranged on a substrate 7 of semiconductor, etc., and an N type layer 9, an I type layer, and a P type layer 11 composed of amorphous Si are deposited by silan gas, etc. and addition gas. Further, an implanted region 15 is formed by selective ion implantation, e.g., by implanting a P type impurity such as boron B. Next, a clear electrode 12 of an ITO and the like is laminted. It is also available that this implanted substance is a high resistant substance such as oxygen, nitrogen, or carbon. For the formation of this implanted region 15, there is a method such as thermal dispersion by a film source containing impurities. A negative voltage is impressed on the clear electrode 12, and a positive voltage on the sampling electrodes or regions 8, and an electric field E is drawn in the positive direction to electrons. |
