| 摘要 |
PURPOSE:To enable to integrate two elements in the same chip, and to contrive to form a semiconductor device in a small type by a method wherein the vertical MOS transistor having the small chip occupying area, and moreover enabled to be formed in large capacity is used as a switching element, and a thyristor having the small chip occupying area, and enabled to be formed in large capacity is used as a fly-wheel element. CONSTITUTION:At a semiconductor device 1, an N-channel vertical power MOS transistor 2 and a fly-wheel thyristor 3 are integrated in the same semiconductor chip, and the drain D of the transistor 2 and the anode A of the thyristor 3, and a control gate CG and the anode A are connected similarly in common. Moreover, a cathode K, the drain D, a gate G, and a source S are led out respectively to a cathode terminal 4, a drain terminal 5, a gate terminal 6 and a source terminal 7 of outside terminals. Accordingly, when the source terminal 7 is connected to the earth, and inductive load 8 is connected between the cathode terminal 4 and the drain terminal 5, and moreover when the cathode terminal 4 is connected to an electric power source +VDD, the load 8 can be choppingly controlled according to a switching signal applied to the gate terminal 6. |
