| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To oxidize only silicon without oxidizing tungsten and molybdenum by executing heat treatment in a mixed atmosphere of steam and hydrogen. CONSTITUTION:When a silicon oxide film 2'' is formed to at least one of an electrode 1 and a wiring material on a silicon substrate 3 through heat treatment to a semiconductor device using tungsten or molybdenum, the semiconductor device is thermally treated in a mixed atmosphere of steam and hydrogen. Tungsten and molybdenum are not oxidized, and an exfoliation from the substrate of the electrode and the wiring material can be prevented.
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| 申请公布号 |
JPS59132136(A) |
申请公布日期 |
1984.07.30 |
| 申请号 |
JP19830006868 |
申请日期 |
1983.01.19 |
| 申请人 |
HITACHI SEISAKUSHO KK |
发明人 |
KOBAYASHI NOBUYOSHI;IWATA SEIICHI;YAMAMOTO NAOKI;MATSUO HITOSHI;HONMA TEIICHI |
| 分类号 |
H01L29/78;H01L21/033;H01L21/266;H01L21/28;H01L21/316;H01L21/32;H01L21/321;H01L21/336;H01L21/762 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 地址 |
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