| 摘要 |
PURPOSE:To improve yield by forming a glass layer, 50wt% or more of glass powder therein has grain size of 5mum or less and the maximum grain size of the powder therein extends over 40mum or less, through a printing method. CONSTITUTION:Glass paste in which glass powder is dry-crushed up to grain- size distribution of 5mum or less and glass powder and slurry are mixed at 3:1 is used, and the glass paste is applied in the groove 3 of the main surface of a semiconductor wafer through printing. Carbitol used as slurry is evaporated, cellulose is burnt and vaporized, and a glass paste layer 1a is changed into a glass powder layer 1b. A glass layer 1c welding on the inner wall of the groove is formed through a baking under the conditions of baking proper to glass and a cooling. When the grain size of glass powder is large, glass grains are difficult to uniformly adhere on the shoulder section of the groove, and dielectric-resistance yield is excellent when grain size is 5mum or less on an average and 40mum or less at a maximum. |
