| 摘要 |
PURPOSE:To equalize film thickness on a crystal growth by fitting and placing a square-shaped flow regulating cover with a U-shaped section for making the flow of a gas corresponding to a material to be grown constant so as to cross a single crystal substrate. CONSTITUTION:A square-shaped flow regulating cover 7 is fitted and placed on a susceptor 4 set up to an inserting and removing bar 3 together with a single crystal substrate 5 so as to cross the single crystal substrate 5. The cover is inserted into a cylindrical reaction pipe 1. A high frequency coil 2 is conducted to heat the susceptor 4, and the single crystal substrate 5 is heated indirectly by the generation of heat of the susceptor 4. A gas 6 adapted to a material to be grown is flowed in the reaction pipe 1, and a crystal is grown on the surface, on which the crystal is grown, of the single crystal substrate 5. |
