发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To make the density of a mask ROM high, in the mask ROM arranged on an MIS type integrated circuit, by fixing information based on whether an insulating film is provided in contact windows or not. CONSTITUTION:A plurality of stripe shaped second conductive regions 3, which are to become address lines CA, are provided on the surface of a first conductive type semiconductor substrate 1. Meanwhile, island shaped first conductive type regions 4, which are to become the intersections of matrix that are aligned and wired on the surface of the regions 3, are provided. A first insulating film 6 having electrode contact windows 5 and 5' is formed on the regions 4. A plurality of metal wirings 7, which are to become lateral address lines RA that are aligned in the direction crossing the regions 3 at a right angle and bridges the contact windows 5 and 5', are formed on the insulating film 6. The fixing of information is performed by removing the insulating film 6 at the contact windows 5' and contacting the wirings 7 and the regions 4.
申请公布号 JPS59132161(A) 申请公布日期 1984.07.30
申请号 JP19830006457 申请日期 1983.01.18
申请人 FUJITSU KK 发明人 SATOU NORIAKI
分类号 G11C17/06;H01L21/331;H01L21/8229;H01L27/102;H01L29/73 主分类号 G11C17/06
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