| 摘要 |
PURPOSE:To enable to utilize an energy beam without causing the increase of power loss by a method wherein the connection part, to be connected to the second electrode film, of the first electrode film covered with a photosemiconductor film is exposed by the irradiation with the energy beam in the atmosphere of inert gas. CONSTITUTION:On a glass insulation substrate 1, the photosemicondutor film 3 composed of amorphous Si is adhered by glow discharge in the SnO2 atmosphere of an Si compound so as to cover the entire surface of the divided first electrode films 2a, 2b, and 2c. The photosemiconductor layer 3 adhered commonly over the entire surfaces in this manner is isolated to every photoelectric conversion region 5a, 5b, and 5c by the irradiation of the laser beam LB. The irradiation of such a laser beam LB is performed in the atmosphere of inert gases such as argon and helium ejected out of a spray nozzle 7. Therefore, it is not concluded that a resistant layer is formed with the result of the heating reaction with oxygen on the surfaces of the connection parts 2b' and 2c' of the first electrode film 2b and 2c exposed by removing the photosemiconductor film 3 by the irradiation with the laser beam LB. |
