| 摘要 |
PURPOSE:To form a flat inter-element isolation oxide film, in which there is no bird-beak, by forming a meshy or striped slit to an isolation region section in a semiconductor substrate through etching and forming the isolation oxide film through oxidation. CONSTITUTION:A resist film 4 is formed on the surface of a semiconductor substrate 1, and an isolation region 9 is patterned according to a necessary manner while an active region 6 is left as it is in the film 4. The substrate 1 is etched while using the pattern 4 as a mask. An oxide film 10 is formed in the active region 6 and an oxide film 11 in the isolation region 9 through oxidation. The thermal oxide film is removed through etching only by the thickness of the film 10 generated in the region 6, and an isolation oxide film 11a is left in the region 9. |
