| 摘要 |
<p>A temperature compensated low voltage reference that produces an output voltage less than the silicon band-gap voltage. The low voltage reference includes at least a first and a second transistor for providing a voltage independent of variations in the collector power supply and at least a third transistor for developing a voltage that is a fractional value of the base-to-emitter voltage drop of a transistor. The at least a third transistor for developing is coupled with the at least a first and a second transistor for providing. The low voltage reference also includes an output transistor for providing an output voltage. The output transistor is controlled by the voltage provided by the at least a first and a second transistor for providing so that the output voltage is essentially insensitive to temperature variations and is a lower value than the silicon band-gap voltage.</p> |
