| 摘要 |
PURPOSE:To chuck electrostatically an object to be treated by disposing an insulating layer on the surface of an electrode on which said object is placed and charging the object and the electrode with the insulation layer in-between. CONSTITUTION:An object 30 to be treated is introduced into a treating chamber 11, and is placed on a lifting table 25 in a descending state. The chamber 11 is put into the condition of enabling formation of plasma ion in this state. The table 25 is then moved upward to bring the top surface of the object 30 into contact with an insulating layer 24, and a DC power source E is connected to a high frequency electrode 23 by closing a switch S1 and opening S2. Since the object 30 is grounded, via the table 25 and a current limiting resistor R, the object 30 is brought into tight contact with an insulating body 24 by the electrostatic attraction force between the same and the electrode 23. The table 25 moves downward and sputtering is performed. |
