| 发明名称 |
Flaechentransistor und Verfahren zu seiner Herstellung |
| 摘要 |
Alloys used for the production of hook collectors in transistors (see Group XXXVI) by fusion with the surface of a semiconductor body are as follows: 99 per cent Al with 1 per cent As: 99.99 per cent In with 0.01 per cent As or P: 99.8 per cent In with 0.2 per cent Sb. |
| 申请公布号 |
DE1179646(B) |
申请公布日期 |
1964.10.15 |
| 申请号 |
DE1955W017618 |
申请日期 |
1955.10.06 |
| 申请人 |
WESTINGHOUSE ELECTRIC CORPORATION |
发明人 |
LONGINI RICHARD LEON |
| 分类号 |
C30B31/04;H01L21/00;H01L21/228;H01L21/24;H01L29/00;H01L29/06;H01L29/167;H01L29/73 |
主分类号 |
C30B31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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