| 摘要 |
In order to measure the thickness of a slightly doped layer superimposed on a highly doped layer in a semiconductor slice, there is applied, by the intermediary of a drop of mercury with a contact surface which is well known and calibrated by a probe 18, a variable voltage V between the two faces of the slice; a Schottky contact is thus formed; the slope of the current i variation in the probe in forward bias is measured, which gives the electrical resistance offered by the slice in the direction of its thickness; there is also measured the slope of the variation of the inverse square of the capacitance C of the diode formed between the faces of the slice in reverse bias, which gives an indication of the resistivity of the slightly doped layer. The thickness of the slice is derived from this by a computation using the product of these two slopes. <IMAGE>
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