| 摘要 |
A semiconductor substrate and process for making are disclosed. The substrate is suitable for use in manufacturing large scale integrated circuits. The process comprises the steps of heating a semiconductor substrate at a temperature not lower than 1100 DEG C., implanting electrically inert impurities into the major surface of the substrate, heating the substrate at a temperature ranging from 600 DEG to 900 DEG C. and providing a single crystal semiconductor layer. |
