| 摘要 |
PURPOSE:To improve light-collection efficiency to incident light and enhance photoelectric conversion efficiency, and to obtain a small-sized conversion device having a high SN ratio by integrally fitting a resin, a refractive index thereof is higher than that of a peripheral resin and which interrupts visible rays but transmits infrared beams, to the front surface of a photoelectric conversion section through a resin molding. CONSTITUTION:A photoelectric conversion device is constituted by two photoelectric conversion sections 1, a sealing resin 2, two lens sections 3 and lead sections 4. In the constitution, a normal transparent epoxy group resin of a refractive index of 1.39 is used as the sealing resin 2, but an epoxy resin, a refractive index thereof is 1.6 and large and which interrupts visible rays but transmits infrared beams, is used as the lens section 3. The photoelectric conversion section 1 consists of a P-i-N photodiode having an i layer of high resistance between a P layer and an N layer, and the lead sections 4 are each connected to the P layers and the N layers. Accordingly, the area of a chip can also be halved because photosensitivity is doubled approximately. |
