| 摘要 |
PURPOSE:To obtain a multilayer interconnection structure having no short-circuit by a method wherein a recessed part is provided on an interlayer insulating film at the crossing point of the first wiring layer and the second wiring layer, and said recessed part is formed in the size wider than the width of said two wiring layers. CONSTITUTION:An SiO2 film 42 is covered on an Si substrate 1 whereon an element has been formed, the first wiring layer 43 is provided, and a CVD SiO2 film 44 is deposited thicker than the film 42. Resist masks 49 and 49' are provided, and a recessed part 48 is formed at the crossing point of wirings. The depth of said recessed part is one half of the film 4 thickness, its width is wider than the wiring layer 43, and a steep stepping is formed. Subsequently, the resists 49 and 49' are removed, and when the second wirings 45 and 45' are formed by performing a photomethanical method and an anisotropic etching method, residue 47 remains on the stepped part of the layers 43 and 44 and the lower part of each side wall of the recessed part 48. However, no short-circuit is generated due to the residue. Accordingly, no additional anisotropic or isotropic etching is necessary, and the short-circuit generating between wiring layers can be prevented, thereby enabling to easily form the multilayer interconnection structure. |
