| 摘要 |
PURPOSE:To perform directional etching with good efficiency at a high speed by a method wherein a substrate surface to be etched is irradiated with a light of energy larger than the forbidden band width of a substance to be etched, and a radical generated with good efficiency by gas discharge is introduced to the surface of the substrate. CONSTITUTION:The gas discharge of a dissociation efficiency better than that of a light is formed in a discharge tube 10 and then used as a gas exciting means. However, it is isolated from a gas discharge part by means of a gate valve 3 in order to remove the effect of ions generated by impressing a high frequency field or microwaves, etc. and discharging. Only a radical of long lifetime, of an excited seed and an active seed generated by gas discharge, is introduced to an etching part, thus irradiating a resist mask 21 on an oxide film 20 of the Si substrate 14 with short wavelength rays 15 through a window 2, resulting in etching. By this constitution, the effect of gas dissociation is remarkable, and the directional property of etching is secured, thus enabling etching at a high speed. |
