| 摘要 |
PURPOSE:To eliminate a cause for disconnection generated in a stepped difference section by diffusing an impurity to one part of a semiconductor thin-film in high concentration and improving the conductivity of the thin-film. CONSTITUTION:An In2O3 transparent electrode 2 and an Ni electrode 3 as an electrode pair are formed on a transparent substrate 1. A semiconductor thin- film 4 is formed extending over the upper sections of these electrodes 2, 3. An impurity 5, which makes a resistance value at a photoelectric time of a film 4 section on the electrode 3 smaller than those of other sections of the film 4, is diffused to the film 4 section existing on the electrode 3 in high concentration. A conductive film 7 is formed so as to short-circuit the positions of both electrodes 2, 3 on the film 4. A photo-sensing section is represented as the film 4 section held by the electrode 2 and the film 7, and displays photoconduction by incident light 8. Currents flow by a path of the electrode 3, a diffusion section 6, the film 7, the film 4 and the electrode 2, and an optical signal is converted into an electric signal. The film 7 and an electrode for extraction can be connected with high reliability because the resistance of the section 6 is made smaller than the resistance value at the photoelectric time of the film 4 at that time. |
