| 摘要 |
PURPOSE:To reduce the generation of defective C-MOSFETs due to displacement on positioning by simultaneously forming source-drains of both n and p channel MOSFETS and the opening sections of both MOSFETs to a nitride film on an oxide film. CONSTITUTION:A thick oxide film 33 is formed on an n type semiconductor substrate 31, an opening section is formed to the film 33, and a p well region 32 is formed through the opening section while a thin oxide film 34 is formed on the surface of the region 32. A nitride film 35 is formed on the films 33, 34. A resist pattern 36 is formed on the film 35, and opening sections 37, 38 and 39, 40 for forming source-drains of an n channel MOSFET and a p channel MOSFET are formed simultaneously to the film 35 while using the pattern 36 as a mask. An n type impurity 41 is implanted into the region 32 through the opening sections 37, 38 and the film 34. The pattern 36 is removed, and the films 33, 34 are etched while using the film 35 as a mask. The upper section of the region 32 side is masked with a resist 42, and a p type impurity 43 is implanted through the opening sections 39, 40. |
