| 摘要 |
PURPOSE:To form a ZnSeTe group semiconductor laser, through which laser beams of a short wavelength can be oscillated, by forming the laser so that Eg1, Eg5>Eg2, Eg3 and Eg2not equal to Eg3 are formed when the band gaps of a first layer - a third layer constituting a fourth layer and a fifth layer are made to be Eg1,2,3,5. CONSTITUTION:Second layers 13 consisting of ZnSe1-yTey (0<y<1) and third layers 14 consisting of ZnSe1-zTez (0<z<1, ynot equal to z) are laminated alternately in a fourth layer 12 formed on one main surface of a first layer 11 consisting of P type ZnSe1-xTex (0.5<x<=1). A fifth layer 15 holding the fourth layer 12 together with the first layer 11 consists of N type ZnSe1-wTew (0<=w<0.5). When the band gaps of the first - third layers 11, 13, 14 and the fifth layer 15 are made to be Eg1, Eg2, Eg3, Eg5, Eg1, Eg5>Eg2, Eg3 and Eg2not equal to Eg3 shall be formed. It is preferable that differences among both band gaps Eg1 and Eg5 and both Eg2 and Eg3 are at least approximately 10%. |
