| 摘要 |
PURPOSE:To fine the size of an element isolation region, and to improve the degree of integration by forming a stepped difference at a desired position in a boundary between the element isolation region and an element forming region and step-breaking a material for a gate electrode by using the stepped difference. CONSTITUTION:An oxide film 21 is formed on the whole surface of silicon, and the oxide films in element regions 22, 23 are removed until silicon is exposed. A region 25 of the oxide film adjacent to boundary sections 24 in which the material for the gate electrode is not cut by a step-breaking is etched in boundary sections among the oxide films and the element regions. Silicon single crystals are grown in element regions 26, 27 through selective epitaxial growth technique, and the oxide-film region 25 is etched so that the element regions are made lower than the region 25 by approximately 0.1mum. A gate oxide film is formed, and a conductive layer as the material for the gate electrode such as a molybdenum-silicide layer is formed. Molybdenum-silicide is cut easily when the stepped difference among the element regions and the oxide film extends over 0.2mum or more. The material for the gate electrode is etched to a desired shape under the state. |
